advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 20v capable of 2.5v gate drive r ds(on) 50m single drive requirement i d 4a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 100 /w data and specifications subject to change without notice 200806173 rohs-compliant product 1 -55 to 150 ap9452gg parameter rating drain-source voltage 20 gate-source voltage +16 continuous drain current, v gs @ 4.5v 3 4 continuous drain current, v gs @ 4.5v 3 2.5 -55 to 150 linear derating factor 0.01 pulsed drain current 1 12 total power dissipation 1.25 thermal data parameter storage temperature range operating junction temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s d g d s sot-89
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =4a - - 38 m ? ? ? 2 ap9452gg
ap9452gg fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 4.5v 3.5v 2.5v v gs =1.5v 0 10 20 30 40 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.5v 3.5v 2.5v v gs =1.5v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v gs =4.5v i d =4a 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , source -to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.45 0.7 0.95 1.2 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 25 35 45 55 65 1357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t a =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9452gg t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0246810121416 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =16v v ds =12v v ds =10v 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c rthja=100 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss
package outline & packing : sot-89 millimeters symbols min nom max 4.40 - 4.60 4.05 - 4.25 1.40 - 1.75 2.40 - 2.60 0.89 - 1.20 0.35 - 0.55 ---- 1.50 ---- ---- 3.00 ---- 1.40 - 1.60 0.35 - 0.43 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information : sot-89 j a b c e advanced power electronics corp. k f i h g d i e b c 1 2 3 h g a j k 9452 part number y wws date code (ywws) y : year wwweek s sequence f 5
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